US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 8 for "Buried bit line structure, method for fabricating buried bit line structure, and memory" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,609, issued on July 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Buried bit line structure, method for fabricating buried bit line structure, and memory" was invented by Wei Feng (Hefei, China), Jingwen Lu (Hefei, China) and Bingyu Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclose a buried bit line structure, a method for fabricating the buried bit line structure, and a memory. The buried bit line structure includes: a substrate having a bit line trench; a bit line metal filled in the bit line trench; and a bit line contact filled in the bit line trench and positioned on the bit line metal,...