US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Signal sampling circuit and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,382, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Signal sampling circuit and semiconductor memory" was invented by Zequn Huang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A signal sampling circuit includes: a signal input circuit, configured to determine a to-be-processed command signal and a to-be-processed chip select signal; a clock receiving circuit, configured to receive an initial clock signal and perform frequency division processing on the initial clock signal to obtain a first clock signal; a sampling and logic circuit, configured to perform two-stage sampling processing and logic o...