US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Semiconductor structure with a transition layer located between gate and ion implantation layer and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,325, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure with a transition layer located between gate and ion implantation layer and method for manufacturing same" was invented by Xiong Li (Hefei, China) and Bin Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor substrate, a trench being provided in the semiconductor substrate, and a gate being formed in the trench; an ion implantation layer located in the semiconductor substrate outside the trench, a top surface of the ion implantation layer being higher than that of the gate,...