US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Semiconductor structure and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,282, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Runping Wu (Hefei, China), Jun Zhang (Hefei, China), Taegyun Kim (Hefei, China), Daejoong Won (Hefei, China) and Soonbyung Park (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: forming multiple trenches spaced apart from each other and extending in a first direction in a substrate, and forming a first insulating layer on sidewalls and bottoms of the trenches; forming a first conductive layer on a surface of the f...