US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Semiconductor structure and method for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,289, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a method for fabricating the same, and relate to the field of semiconductor technology. The method includes: providing a substrate provided with word line trenches and bit line trenches, where the word line trenches and the bit line trenches separate the substrate into active pillars arranged at intervals, an...