US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Semiconductor structure and formation method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,279, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and formation method thereof" was invented by Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relates to a semiconductor structure and a formation method thereof. The method for forming a semiconductor structure includes: forming a stacked layer on a top surface of a substrate, where the stacked layer includes a plurality of semiconductor layers spaced along a first direction, the stacked layer includes a transistor region, and a capacitor region and a bit line region; forming a capacitor extending al...