US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Semiconductor structure, method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,283, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for manufacturing same" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Youming Liu (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes the following operations. A substrate is provided, and is etched to form first isolation trenches in a cell region and a second isolation trench in a peripheral region. A first isolation dielectric layer is filled in each of the first isolation trenches and an isolation ...