US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Semiconductor device including shared sense amplification circuit group" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,291, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device including shared sense amplification circuit group" was invented by Erxuan Ping (Hefei, China) and Zhen Zhou (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a plurality of memory cell groups and a plurality of sense amplification unit groups, and at least two memory cell groups share a same sense amplification unit group."

The patent was filed on Nov. 8, 2021, under Application No. 17/520,789.

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