US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Photomask assembly, patterned mask and method for forming the same, and method for forming active region" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,550, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Photomask assembly, patterned mask and method for forming the same, and method for forming active region" was invented by Fufang Chao (Hefei, China), Junjun Zhang (Hefei, China) and Zhimin Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photomask assembly includes: a first photomask for forming a first patterned structure, the first patterned structure having a first patterned opening which includes a plurality of strip-shaped patterns, a distance between the strip-shaped patterns at the two sides of a boundary between the first region and th...