US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Method for fabricating semiconductor structure, and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,585, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating semiconductor structure, and semiconductor structure" was invented by Chih-Wei Chang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure, and the semiconductor structure. The method includes: providing a substrate having a connection hole thereon, annular protrusions and annular grooves alternately arranged along a direction parallel to a center line of the connection hole being ...