US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Memory and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,288, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory and method for forming same" was invented by Gongyi Wu (Hefei, China), Yachao Xu (Hefei, China) and Xiaoyu Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a memory includes: forming a bit line structure and a capacitor contact layer, where the bit line structure includes a bit line, a bit line cap layer and a bit line isolation layer, and the capacitor contact layer covers part of a side wall of the bit line isolation layer; forming a stop layer covering the side wall of the bit line isolation layer; forming a capa...