ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,280, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Memory and memory forming method" was invented by Deyuan Xiao (Hefei, China) and Guangsu Shao (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a memory and a memory forming method. The memory forming method includes: providing an initial substrate; etching the initial substrate to form a plurality of capacitor holes and a plurality of recesses that are connected to the capacitor holes in a one-to-one corresponding manner and located below the capacitor holes; forming an isolation layer that connects adjacent ones o...