US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Chip structure and semiconductor structure comprising auxiliary bonding region above guard ring structure" (Chinese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,634, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Chip structure and semiconductor structure comprising auxiliary bonding region above guard ring structure" was invented by Ling-Yi Chuang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a chip structure and a semiconductor structure. The chip structure includes: a substrate; a functional region located on the substrate; a guard ring structure surrounding the functional region; and an auxiliary bonding region located above the guard ring structure, where there is an overlapping region between a projection of at least...