US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 29 for "Bit line structure, semiconductor structure and method of manufacturing bit line structure" (Chinese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,287, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Bit line structure, semiconductor structure and method of manufacturing bit line structure" was invented by Xing Jin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a bit line (BL) structure, a semiconductor structure and a method of manufacturing the BL structure. The BL structure is provided on a substrate, and includes: a contact portion, including a bottom surface connected to the substrate; a barrier layer, including an extension portion, the extension portion covering a top surface and an outer sidewall surfac...