US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 22 for "Semiconductor test sample and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,051, issued on July 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor test sample and manufacturing method thereof" was invented by Rui Ding (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor test sample includes: providing a product to be analyzed, the product comprises a conductive interconnection layer and a semiconductor doped region located below the conductive interconnection layer; selectively removing a conductive material from the conductive interconnection layer, replacing the conductive material with a non-conductive material and replacing the conductiv...