US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 22 for "Semiconductor structure having silicide layer disposed on sidewalls of the bitline" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,315, issued on July 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure having silicide layer disposed on sidewalls of the bitline" was invented by Tieh-Chiang Wu (Hefei, China) and Lingxin Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method making it are disclosed. The method includes: providing a substrate, and sequentially forming a bitline contact structure and a bitline on the substrate; the bitline includes a connection layer connected to the bitline contact structure. The bitline contact structure and the sidewalls of the connection layer are etched...