US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 22 for "Semiconductor structure and method for fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,313, issued on July 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating the same" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a method for fabricating a semiconductor structure. The semiconductor structure includes a substrate, a capacitor structure, a transistor structure, bit lines, and word lines. The capacitor structure is arranged on the substrate, the transistor structure is arranged on a side of the capacitor structure, one of a source and a drain o...