US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 22 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,297, issued on July 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Yi Jiang (Hefei, China), Deyuan Xiao (Hefei, China), Weiping Bai (Hefei, China), Yunsong Qiu (Hefei, China) and Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The method of manufacturing a semiconductor structure includes: providing a base including a first region and a second region, where a plurality of active pillars are arranged at intervals in the base located in ...