US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 22 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,295, issued on July 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China), Deyuan Xiao (Hefei, China), Minki Hong (Hefei, China), Jo-Lan Chin (Hefei, China) and Kyongtaek Lee (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base, where the base is provided with an array region and a peripheral region, the array region is provided with vertical transistor struc...