US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 22 for "Semiconductor structure and a method of making the same" (Chinese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,304, issued on July 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and a method of making the same" was invented by Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a semiconductor device, comprising a semiconductor layer, extending along the first direction; the semiconductor layer includes a capacitor area facing the capacitor structure, and the capacitor structure includes: a lower electrode layer, the capacitor dielectric layer and the upper electrode layer, sequentially surrounding the sidewalls of the capacitor area extending al...