US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 22 for "Memory device, and semiconductor structure and forming method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,308, issued on July 22, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory device, and semiconductor structure and forming method thereof" was invented by Longyang Chen (Hefei, China), Zhongming Liu (Hefei, China), Hongfa Wu (Hefei, China) and Gongyi Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device, and a semiconductor structure and a forming method thereof, which includes: providing a substrate, which includes a plurality of bit line structures, forming a cover layer on each of the bit line structures, forming a first insulating layer and a second insulating layer...