US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 15 for "Voltage generating circuit and memory" (Chinese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,001, issued on July 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Voltage generating circuit and memory" was invented by Jianyong Qin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a voltage generating circuit and a memory. The voltage generating circuit includes: a voltage output module configured to receive a reference voltage, generate a first output voltage, and provide the first output voltage to a power supply node, where the power supply node is connected to a load to supply power to the load; a voltage stabilizing module configured to receive the reference voltage and gen...