US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 15 for "Three-dimensional memory device with capacitors and vertical word-line" (Chinese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,884, issued on July 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Three-dimensional memory device with capacitors and vertical word-line" was invented by Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate; at least one layer of memory structure formed on the substrate, in which each layer of memory structure comprises a bit line structure and a plurality of capacitor structures symmetrically distributed on both sides of the bit line structure, the plurality of capacitor structures and the bit line structure extend in a first direction parallel to the substra...