US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 15 for "Test structure of wafer and method of manufacturing test structure of wafer" (Chinese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,242, issued on July 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Test structure of wafer and method of manufacturing test structure of wafer" was invented by Hongcheng Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a test structure of a wafer and a method of manufacturing a test structure of a wafer, and relate to the technical field of semiconductors. The test structure of a wafer includes at least one test unit provided in a scribe line of the wafer, where the test unit includes a first active area and a second active area that are connected to each other; th...