US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 15 for "Semiconductor structure including two shielding layers and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,167, issued on July 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure including two shielding layers and manufacturing method thereof" was invented by YuLei Wu (Hefei, China), Baolei Wu (Hefei, China), Xiaoguang Wang (Hefei, China) and Er-Xuan Ping (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: providing a substrate; forming a first shielding layer on the substrate; forming a first electrode penetrating the first shielding layer; forming a storage structure on the first electrode; forming a second shielding layer on the top surfa...