US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 15 for "Semiconductor structure and method for fabricating semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,951, issued on July 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating semiconductor structure" was invented by Yutong Shen (Hefei, China) and Jifeng Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a method for fabricating the same. The semiconductor structure includes: a substrate, having a first region and a second region; a first gate structure positioned in the first region and a second gate structure positioned in the second region, the first gate structure being a high dielectric constant gate including a f...