US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 15 for "Method of manufacturing semiconductor structure and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,882, issued on July 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of manufacturing semiconductor structure and semiconductor structure" was invented by Xinman Cao (Hefei, China), Zhongming Liu (Hefei, China), Jun Xia (Hefei, China) and Shijie Bai (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application relates to the technical field of manufacturing semiconductor, and in particular to a method of manufacturing semiconductor structure and a semiconductor structure. The method of manufacturing semiconductor structure includes: forming a conductive layer on a substrate, and removing part of th...