US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 15 for "Anti-fuse address decoding circuit, operation method, and memory" (Chinese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,025, issued on July 15, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Anti-fuse address decoding circuit, operation method, and memory" was invented by Rumin Ji (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An anti-fuse address decoding circuit includes: a pre-decoding circuit, configured to decode a programming address of an anti-fuse memory array and output a programming address pre-decoded signal; a level shift circuit, coupled to the pre-decoding circuit, and configured to boost the programming address pre-decoded signal and output a boosted signal; and a programming address decoding circuit, configured to rec...