US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 1 for "Semiconductor structure and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,334, issued on July 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a gate structure, a cover layer and a first sacrificial structure. The substrate includes discrete semiconductor channels arranged at a top of the substrate. The gate structure is disposed in a middle region of a semiconductor channel, and includes a ring structure and a bridge structure. The ring structure e...