US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 1 for "Semiconductor structure and method for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,685, issued on July 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Yexiao Yu (Hefei, China), Zhongming Liu (Hefei, China), Zhong Kong (Hefei, China) and Longyang Chen (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a fabricating method. The method includes: providing a substrate, where a plurality of active areas arranged at intervals are provided in the substrate, and the substrate is covered with an insulating layer and a barrier layer stacked sequentially; forming, in the barrier layer, a pl...