US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 1 for "Semiconductor structure and method for fabricating same" (Chinese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,765, issued on July 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Ling-Yi Chuang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to the field of semiconductors, and provide a semiconductor structure and a method for fabricating the same. The semiconductor structure includes a first wafer and a second wafer. A surface of the first wafer has a first electrode plate, a first dielectric layer and a first dummy pad stacked in sequence to constitute a capacitor; and the surface of the first wafer further has a first functional pa...