US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 1 for "Method of forming semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,372, issued on July 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of forming semiconductor structure and semiconductor structure" was invented by Chih-Cheng Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of forming a semiconductor structure and a semiconductor structure. The method of forming the semiconductor structure includes: providing an initial structure, where the initial structure includes a substrate and a dielectric layer; forming a conductive trench, where a distance between a bottom surface of the conductive trench and a second side surface of the su...