US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 1 for "Memory array circuit, memory array layout and verification method" (Chinese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,346,647, issued on July 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory array circuit, memory array layout and verification method" was invented by Peihuan Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present application provide a memory array circuit, a memory array layout and a verification method. The memory array circuit includes: M word lines (WLs); M WL break nodes, each being configured to separate a corresponding one of the WLs into a first WL pin and a second WL pin; N bit lines (BLs); and N BL break nodes, each being configured to separate a corresponding one of the BLs into a...