US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 28 for "Semiconductor structure with a second isolation dam and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,852, issued on Jan. 28, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure with a second isolation dam and manufacturing method thereof" was invented by Yukun Li (Hefei, China) and Tao Chen (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor substrate, a first isolation dam, a plurality of switching transistors and a second isolation dam. The semiconductor substrate includes a trench, an isolation region formed by a region where the trench is located, a plurality of active regions defined by the isolation region, and an electrical isolation layer, the...