US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 28 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,813, issued on Jan. 28, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Ling-Yi Chuang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first chip and a second chip, where a first conductive connection wire of the first chip is connected to a first conductive contact pad, a second conductive connection wire of the second chip is connected to a second conductive c...