US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 28 for "Control circuit on memory chip and dynamic random access memory" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,542, issued on Jan. 28, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Control circuit on memory chip and dynamic random access memory" was invented by Jiarui Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a control circuit and a dynamic random access memory. A first connector of the memory chip connects to an input terminal of a functional circuit via a first switch circuit, and an output terminal of the functional circuit connects to a second connector via a second switch circuit, where the first switch circuit and the second switch circuit correspond to a first switch state. A second con...