US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 27 for "Semiconductor structure and method for forming semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,476, issued on Jan. 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for forming semiconductor structure" was invented by Chih-Cheng Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes: a substrate is provided; bit line contact holes spaced apart from each other, bit line contacts each in contact with a part of a respective one of the bit line contact holes, and bit line structures are formed on the substrate, where each of the bit line structures includes at least a cond...