US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 20 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,448, issued on Jan. 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Mengmeng Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a substrate; and a plurality of capacitor structures arranged on a surface of the substrate. Each of the plurality of capacitor structures extends in a first direction. The first direction is parallel to the surface of the substrate. Each of the plurality of cap...