US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 20 for "Method for forming semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,495, issued on Jan. 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming semiconductor structure" was invented by Chao Lin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method includes: providing a base, the base including a first area and second areas located outside the first area, the first area including stack structures and isolation trenches alternately arranged in a first direction, the first direction being any direction in a plane where the base is located; performing ion implantation on sidewalls of the stack structure in the...