US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 13 for "Semiconductor structure and method for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,452, issued on Jan. 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Gongyi Wu (Hefei, China), Xiaofei Wu (Hefei, China) and Yachao Xu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments discloses a semiconductor structure and a fabricating method. The method includes: forming a contact hole on a substrate; forming a first doped layer on a surface of the contact hole, and annealing the first doped layer; forming at least one second doped layer on the first doped layer, and annealing each of the at least one second doped layer; and form...