US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 13 for "Method for forming semiconductor structure, laminate structure, and method for forming laminate structure" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,010, issued on Jan. 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming semiconductor structure, laminate structure, and method for forming laminate structure" was invented by Chengfang Chao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure and a method for forming a laminate structure include the following operations. A laminate structure is provided, the laminate structure including a plurality of sacrificial layers and a plurality of support layers alternately stacked on one another, each support layers includes a plurality of doped areas and a plurali...