US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Jan. 13 for "Memory and method for manufacturing memory" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,979, issued on Jan. 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory and method for manufacturing memory" was invented by Mengmeng Yang (Hefei, China), Jie Bai (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes a plurality of semiconductor structures stacked onto one another. Each of the plurality of semiconductor structures include: a first base including a peripheral circuit structure; a first integrated circuit layer disposed on the first base and electrically connected to the peripheral circuit structure; and a second base disposed on the first integrated cir...