US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 4 for "ESD protection structure, ESD protection circuit, and chip" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,126, issued on Feb. 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"ESD protection structure, ESD protection circuit, and chip" was invented by Qian Xu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides an electrostatic discharge (ESD) protection structure, an ESD protection circuit, and a chip. The ESD protection structure includes a semiconductor substrate, a first N-type well, a first P-type well, a first N-type doped portion, a first P-type doped portion, a second N-type doped portion, and a second P-type doped portion. The semiconductor substrate includes a first integrated region. ...