ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,217,825, issued on Feb. 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Drive circuit and memory device" was invented by Zhonglai Liu (Hefei, China), Xianjun Wu (Hefei, China) and Anping Qiu (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed driver and memory include: a phase driver that receives a first voltage signal, configured to output a second phase signal according to the first phase signal and the first voltage signal; a complementary phase driver includes: a first inverter for generating a complementary inverted phase signal based on a first complementary phase signal, the first phase signal and the ...