US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 4 for "Control amplification circuit, sensitive amplifier and semiconductor memory" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,217,789, issued on Feb. 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Control amplification circuit, sensitive amplifier and semiconductor memory" was invented by Daoxun Wu (Hefei, China) and Weibing Shang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a control amplification circuit, a sensitive amplifier and a semiconductor memory. The control amplification circuit includes: a power consumption control circuit, configured to receive a power consumption control signal and output a first reference signal according to the power consumption control signal; an isolating circuit, con...