US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 3 for "Semiconductor structure and method for fabricating same" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,350, issued on Feb. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Jinrong Huang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclose a semiconductor structure and a method for fabricating the same. The semiconductor structure includes: a substrate, a gate dielectric layer, a first conductive layer, and a conductive plug. The gate dielectric layer is provided on the substrate, and the first conductive layer is provided on the gate dielectric layer. The conductive plug is provided on the gate dielectric layer and covers a side w...