US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 3 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,306, issued on Feb. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Deyuan Xiao (Hefei, China), Guangsu Shao (Hefei, China), Yunsong Qiu (Hefei, China) and Yi Jiang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a substrate, where the substrate includes first grooves arranged at intervals therein along a second direction and extended along a first direction, and a filling layer in the first groove; pattern...