US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 3 for "Semiconductor structure, method for forming same and layout structure" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,304, issued on Feb. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for forming same and layout structure" was invented by Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure comprises: providing a substrate, which includes a first area and a second area arranged in sequence in a second direction, the first area including active layers arranged at intervals in a third direction; forming an initial gate structure located on a surface of each active layer in the first area; etching the initial gate structures to form comb-shaped gate st...