US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 25 for "Memory test method, memory test apparatus, memory test device, and storage medium" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,036, issued on Feb. 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory test method, memory test apparatus, memory test device, and storage medium" was invented by Xiaolei Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory test method includes: obtaining a preset memory and a memory to be tested; setting the memory to be tested as a reserved memory; starting an operating system, wherein the operating system runs in the preset memory; and executing a memory test program to test the memory to be tested, wherein the memory test program runs in the preset memory."

The patent was filed on June 7, 2021, und...