ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,236,141, issued on Feb. 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Memory circuit and memory" was invented by Sungsoo Chi (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit at least includes a plurality of memory banks, where each of the memory banks includes a first memory sub-bank, a second memory sub-bank and a third memory sub-bank sequentially arranged, the second memory sub-bank including a first memory section and a second memory section, the first memory sub-bank and the second memory section being configured to store upper bytes, and the first memory section and the third memory sub-bank be...